تقرير
Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films
| العنوان: | Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films |
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| المؤلفون: | Zucchetti, C., Dau, M. -T, Bottegoni, F., Vergnaud, C., Guillet, T., Marty, A., Beigné, C., Gambarelli, S., Picone, A., Calloni, A., Bussetti, G., Brambilla, A., Duò, L., Ciccacci, F., Das, P. K., Fujii, J., Vobornik, I., Finazzi, M., Jamet, M. |
| المصدر: | Phys. Rev. B 98, 184418 (2018) |
| سنة النشر: | 2018 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, when an ultrathin Bi film is epitaxially grown on top of a Ge(111) substrate, quantum size effects arising in nanometric Bi islands drastically boost the SCI efficiency, even at room temperature. Using x-ray diffraction (XRD), scanning tunneling microscopy (STM) and spin- and angle-resolved photoemission (S-ARPES) we obtain a clear picture of the film morphology, crystallography and electronic structure. We then exploit the Rashba-Edelstein effect (REE) and inverse Rashba-Edelstein effect (IREE) to directly quantify the SCI efficiency using optical and electrical spin injection. Comment: 18 pages, 5 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.98.184418 |
| URL الوصول: | http://arxiv.org/abs/1805.01841 |
| رقم الأكسشن: | edsarx.1805.01841 |
| قاعدة البيانات: | arXiv |
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