تقرير
Strain-Engineering Mott-Insulating La$_2$CuO$_4$
العنوان: | Strain-Engineering Mott-Insulating La$_2$CuO$_4$ |
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المؤلفون: | Ivashko, O., Horio, M., Wan, W., Christensen, N. B., McNally, D. E., Paris, E., Tseng, Y., Shaik, N. E., Rønnow, H. M., Wei, H. I., Adamo, C., Lichtensteiger, C., Gibert, M., Beasley, M. R., Shen, K. M., Tomczak, J. M., Schmitt, T., Chang, J. |
المصدر: | Nature Communications 10, 786 (2019) |
سنة النشر: | 2018 |
المجموعة: | Condensed Matter |
مصطلحات موضوعية: | Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Superconductivity |
الوصف: | The transition temperature $T_\textrm{c}$ of unconventional superconductivity is often tunable. For a monolayer of FeSe, for example, the sweet spot is uniquely bound to titanium-oxide substrates. By contrast for La$_{2-\mathrm{x}}$Sr$_\mathrm{x}$CuO$_4$ thin films, such substrates are sub-optimal and the highest $T_\textrm{c}$ is instead obtained using LaSrAlO$_4$. An outstanding challenge is thus to understand the optimal conditions for superconductivity in thin films: which microscopic parameters drive the change in $T_\mathrm{c}$ and how can we tune them? Here we demonstrate, by a combination of x-ray absorption and resonant inelastic x-ray scattering spectroscopy, how the Coulomb and magnetic-exchange interaction of La$_2$CuO$_4$ thin films can be enhanced by compressive strain. Our experiments and theoretical calculations establish that the substrate producing the largest $T_\textrm{c}$ under doping also generates the largest nearest neighbour hopping integral, Coulomb and magnetic-exchange interaction. We hence suggest optimising the parent Mott state as a strategy for enhancing the superconducting transition temperature in cuprates. Comment: 15 pages, 7 figures and 2 tables (including Supplementary Information) |
نوع الوثيقة: | Working Paper |
DOI: | 10.1038/s41467-019-08664-6 |
URL الوصول: | http://arxiv.org/abs/1805.07173 |
رقم الأكسشن: | edsarx.1805.07173 |
قاعدة البيانات: | arXiv |
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