تقرير
Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
| العنوان: | Gate-tunable Electronic Transport in p-type GaSb Quantum Wells |
|---|---|
| المؤلفون: | Karalic, Matija, Mittag, Christopher, Hug, Michael, Shibata, Kenji, Tschirky, Thomas, Wegscheider, Werner, Winkler, R., Ensslin, Klaus, Ihn, Thomas |
| المصدر: | Phys. Rev. B 99, 115435 (2019) |
| سنة النشر: | 2019 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak anti-localization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.99.115435 |
| URL الوصول: | http://arxiv.org/abs/1901.10891 |
| رقم الأكسشن: | edsarx.1901.10891 |
| قاعدة البيانات: | arXiv |
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