تقرير
Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
| العنوان: | Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires |
|---|---|
| المؤلفون: | Mastro, Michael A., Kim, Hong-Youl, Ahn, Jaehui, Simpkins, Blake, Pehrsson, Pehr, Kim, Jihyun, Hite, Jennifer K., Eddy Jr, Charles R. |
| المصدر: | IEEE Transactions of Electronic Devices 58(10):3401 (2011) |
| سنة النشر: | 2020 |
| المجموعة: | Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics |
| الوصف: | An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross-section, which creates a doublet peak in the piezoelectric induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces as well as an interaction with the opposing polarization fields at two semi-polar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on configuration of the multi-layer structure, and is not amenable to an analytical model. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1109/TED.2011.2162108 |
| URL الوصول: | http://arxiv.org/abs/2009.02142 |
| رقم الأكسشن: | edsarx.2009.02142 |
| قاعدة البيانات: | arXiv |
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