تقرير
High Density, Localized Quantum Emitters in Strained 2D Semiconductors
العنوان: | High Density, Localized Quantum Emitters in Strained 2D Semiconductors |
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المؤلفون: | Kim, Gwangwoo, Kim, Hyong Min, Kumar, Pawan, Rahaman, Mahfujur, Stevens, Christopher E., Jeon, Jonghyuk, Jo, Kiyoung, Kim, Kwan-Ho, Trainor, Nicholas, Zhu, Haoyue, Sohn, Byeong-Hyeok, Stach, Eric A., Hendrickson, Joshua R., Glavin, Nicholas R, Suh, Joonki, Redwing, Joan M., Jariwala, Deep |
المصدر: | ACS Nano, 2022 |
سنة النشر: | 2022 |
المجموعة: | Condensed Matter Physics (Other) |
مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Condensed Matter - Other Condensed Matter, Physics - Applied Physics, Physics - Optics |
الوصف: | Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources. Comment: 45 pages, 20 figures (5 main figures, 15 supporting figures) |
نوع الوثيقة: | Working Paper |
DOI: | 10.1021/acsnano.2c02974 |
URL الوصول: | http://arxiv.org/abs/2204.00397 |
رقم الأكسشن: | edsarx.2204.00397 |
قاعدة البيانات: | arXiv |
DOI: | 10.1021/acsnano.2c02974 |
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