تقرير
Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate
| العنوان: | Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate |
|---|---|
| المؤلفون: | Cao, Shimin, Chen, Mantang, Zeng, Jiang, Ma, Ning, Zheng, Runjie, Feng, Ya, Yan, Shili, Liu, Jing, Watanabe, Kenji, Taniguchi, Takashi, Xie, X. C., Chen, Jian-Hao |
| سنة النشر: | 2022 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Strong band engineering in two-dimensional (2D) materials can be achieved by introducing moir\'e superlattices, leading to the emergence of various novel quantum phases with promising potential for future applications. Presented works to create moir\'e patterns have been focused on a twist embedded inside channel materials or between channel and substrate. However, the effects of a twist inside the substrate materials on the unaligned channel materials are much less explored. In this work, we report the realization of superlattice multi-Dirac cones with the coexistence of the main Dirac cone in a monolayer graphene (MLG) on a ~0.14{\deg} twisted double-layer boron nitride (tBN) substrate. Transport measurements reveal the emergence of three pairs of superlattice Dirac points around the pristine Dirac cone, featuring multiple metallic or insulating states surrounding the charge neutrality point (CNP). Displacement field tunable and electron-hole asymmetric Fermi velocities are indicated from temperature dependent measurements, along with the gapless dispersion of superlattice Dirac cones. The experimental observation of multiple Dirac cones in MLG/tBN heterostructure is supported by band structure calculations employing periodic moir\'e potential. Our results unveil the potential of using twisted substrate as a universal band engineering technique for 2D materials regardless of lattice matching and crystal orientations, which might pave the way for a new branch of twistronics. Comment: 13 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/2053-1583/acbdaa |
| URL الوصول: | http://arxiv.org/abs/2206.10842 |
| رقم الأكسشن: | edsarx.2206.10842 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/2053-1583/acbdaa |
|---|