تقرير
Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure
| العنوان: | Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure |
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| المؤلفون: | Zhang, Xian, Liu, Bang, Huang, Junsheng, Cao, Xinwei, Zhang, Yunzhe, Guo, Zhi-Xin |
| المصدر: | Phys. Rev. B 109, 205105 (2024) |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that inverting the ferroelectric polarization in a Sc2CO2 monolayer can effectively modulate the electronic states of a VSi2N4 monolayer, enabling a transition from half-metal to half-semiconductor. This transition significantly alters the electronic transport properties. Furthermore, we construct a Spin-FET device based on this multiferroic heterostructure and observe that the VSi2N4/Sc2CO2-based Spin-FET exhibits exceptional all-electric-controlled performance. Notably, the inversion of the Sc2CO2 ferroelectric polarization yields a substantial on-off current ratio, approximately 650\%, under a minimal bias voltage of 0.02 V. Additionally, we identify a unique spatially-separated spin-polarized transport phenomenon, wherein pure spin-up electrons transport exclusively through VSi2N4, and spin-down electrons through Sc$_2$CO$_2$. Our findings suggest a promising pathway for developing low-energy-dissipation and nonvolatile FET devices. Comment: 5 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2311.03690 |
| رقم الأكسشن: | edsarx.2311.03690 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |