تقرير
Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
| العنوان: | Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding |
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| المؤلفون: | Burakowski, Marek, Holewa, Paweł, Sakanas, Aurimas, Musiał, Anna, Sęk, Grzegorz, Mrowiński, Paweł, Yvind, Kresten, Semenova, Elizaveta, Syperek, Marcin |
| المصدر: | Optics Express 32, 7, 10874-10886 (2024) |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Optics, Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $\mu$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1364/OE.515223 |
| URL الوصول: | http://arxiv.org/abs/2311.13961 |
| رقم الأكسشن: | edsarx.2311.13961 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1364/OE.515223 |
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