تقرير
Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures
| العنوان: | Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures |
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| المؤلفون: | Chen, An-Hsi, Lu, Qiangsheng, Hershkovitz, Eitan, Crespillo, Miguel L., Mazza, Alessandro R., Smith, Tyler, Ward, T. Zac, Eres, Gyula, Gandhi, Shornam, Mahfuz, Meer Muhtasim, Starchenko, Vitalii, Hattar, Khalid, Lee, Joon Sue, Kim, Honggyu, Moore, Robert G., Brahlek, Matthew |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Superconductivity, Condensed Matter - Materials Science |
| الوصف: | Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that the $T_{C}^{onset}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when $Bi_2Te_3$ is replaced with the topological phase $Bi_4Te_3$. Interfacing Fe(Te,Se) with $Bi_4Te_3$ is also found to be critical for stabilizing superconductivity in monolayer films where $T_{C}^{onset}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the $Bi_4Te_3$ layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing $T_C$ in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases. Comment: 18 pages, 5 figures, accepted by Advanced Materials |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1002/adma.202401809 |
| URL الوصول: | http://arxiv.org/abs/2405.15654 |
| رقم الأكسشن: | edsarx.2405.15654 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1002/adma.202401809 |
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