دورية أكاديمية
Modelling and optimization of SiC MOSFET switching voltage and current overshoots in a half‐bridge configuration
| العنوان: | Modelling and optimization of SiC MOSFET switching voltage and current overshoots in a half‐bridge configuration |
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| المؤلفون: | Lina Wang, Haobo Ma, Hongcheng Qiu, Kai Yuan, Zhuang Liu, Guoen Cao |
| المصدر: | IET Power Electronics, Vol 14, Iss 9, Pp 1684-1699 (2021) |
| بيانات النشر: | Wiley, 2021. |
| سنة النشر: | 2021 |
| المجموعة: | LCC:Electronics |
| مصطلحات موضوعية: | Insulated gate field effect transistors, Optimisation techniques, Semiconductor device modelling, equivalent circuits, design and testing, Electronics, TK7800-8360 |
| الوصف: | Abstract Due to the high‐speed switching, the switching process of a silicon carbide (SiC) metal oxide field effect transistor (MOSFET) in a practical circuit is susceptible to parasitics and exhibits significant current and voltage overshoots. This may subsequently lower the efficiency of the device, degrade the reliability of the system, increase the level of electromagnetic interference and prohibit the full utilization of SiC MOSFETs’ potential. Conventional qualitative analysis is difficult to support enough guidance to deal with the switching overshoots in practice. In order to implement quantitative analysis of the switching overshoots of SiC power electronic circuits, an analytical model of SiC MOSFET switching behaviour in the half‐bridge configuration was derived considering all important parasitic parameters, the non‐linear characteristics of the parasitic capacitances and the transconductance coefficient of the device. Based on the derived analytical model, the switching voltage and current overshoots under the specific circuit parameter conditions can be quantitatively evaluated without complex system‐level modelling. Sensitivity analysis for the voltage and current overshoots during the switching transient was quantified. Moreover, the effect rule of the gate resistance on the voltage overshoot was revealed. In the article, simulation and experimental results validate the analytical model and analysis results. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1755-4543 1755-4535 |
| Relation: | https://doaj.org/toc/1755-4535; https://doaj.org/toc/1755-4543 |
| DOI: | 10.1049/pel2.12146 |
| URL الوصول: | https://doaj.org/article/1f8db3e967f444399778726c514325a5 |
| رقم الأكسشن: | edsdoj.1f8db3e967f444399778726c514325a5 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 17554543 17554535 |
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| DOI: | 10.1049/pel2.12146 |