دورية أكاديمية

An extended computational approach for point-defect equilibria in semiconductor materials

التفاصيل البيبلوغرافية
العنوان: An extended computational approach for point-defect equilibria in semiconductor materials
المؤلفون: Takafumi Ogawa, Ayako Taguchi, Akihide Kuwabara
المصدر: npj Computational Materials, Vol 8, Iss 1, Pp 1-11 (2022)
بيانات النشر: Nature Portfolio, 2022.
سنة النشر: 2022
المجموعة: LCC:Materials of engineering and construction. Mechanics of materials
LCC:Computer software
مصطلحات موضوعية: Materials of engineering and construction. Mechanics of materials, TA401-492, Computer software, QA76.75-76.765
الوصف: Abstract Concentrations of intrinsic and extrinsic point defects in crystalline materials with a bandgap are typically calculated in a constant-μ approach from defect formation energies based on density functional theory. In this work, calculations of thermal and charge equilibria among point defects are extended to a constant-N approach. The two approaches for point-defect equilibria are comparatively demonstrated in the application to Mg2Si doped with Li, Na, and Ag, which is a lightweight and environmentally friendly thermoelectric candidate material. Our results reveal the systematic behavior of defect and carrier concentrations. The dopant atoms form interstitial defects at similar concentrations to substitutional defects at the Mg sites, resulting in significantly reduced free-carrier concentrations compared to the expected values. The developed procedures could be utilized to find an optimal avenue for achieving higher carrier concentrations, e.g., with regard to annealing temperature and the concentration of dopant atoms, in various semiconductors and insulators.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2057-3960
Relation: https://doaj.org/toc/2057-3960
DOI: 10.1038/s41524-022-00756-0
URL الوصول: https://doaj.org/article/a3eb723a124547a6a3b45cd1b4fa5b5b
رقم الأكسشن: edsdoj.3eb723a124547a6a3b45cd1b4fa5b5b
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20573960
DOI:10.1038/s41524-022-00756-0