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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

التفاصيل البيبلوغرافية
العنوان: Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
المؤلفون: Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
المصدر: Membranes, Vol 11, Iss 11, p 848 (2021)
بيانات النشر: MDPI AG, 2021.
سنة النشر: 2021
المجموعة: LCC:Chemical technology
LCC:Chemical engineering
مصطلحات موضوعية: QST substrate, back-barrier layer, high thermal conductivity, Chemical technology, TP1-1185, Chemical engineering, TP155-156
الوصف: In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 11110848
2077-0375
Relation: https://www.mdpi.com/2077-0375/11/11/848; https://doaj.org/toc/2077-0375
DOI: 10.3390/membranes11110848
URL الوصول: https://doaj.org/article/49ca62e52e804ee3b70050b53afafe78
رقم الأكسشن: edsdoj.49ca62e52e804ee3b70050b53afafe78
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:11110848
20770375
DOI:10.3390/membranes11110848