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Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

التفاصيل البيبلوغرافية
العنوان: Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
المؤلفون: A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton
المصدر: APL Materials, Vol 7, Iss 5, Pp 051103-051103-7 (2019)
بيانات النشر: AIP Publishing LLC, 2019.
سنة النشر: 2019
المجموعة: LCC:Biotechnology
LCC:Physics
مصطلحات موضوعية: Biotechnology, TP248.13-248.65, Physics, QC1-999
الوصف: Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy of the lowest doped samples revealed dominant A traps with level Ec − 0.6 eV and B traps near Ec − 1.1 eV. With increasing shallow donor concentration, the density of the A traps increased, and new traps C (Ec − 0.85 eV) and D (Ec − 0.23 eV) emerged. Photocapacitance spectra showed the presence of deep traps with optical ionization energy of ∼2 and 2.7 eV and prominent persistent photocapacitance at low temperature, surviving heating to temperatures above room temperature. The diffusion length of nonequilibrium charge carriers was 0.15 µm, and microcathodoluminescence spectra showed peaks in the range 339–540 nm, but no band-edge emission.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2166-532X
Relation: https://doaj.org/toc/2166-532X
DOI: 10.1063/1.5094787
URL الوصول: https://doaj.org/article/62c030d840d44b248fc22aab13c1599b
رقم الأكسشن: edsdoj.62c030d840d44b248fc22aab13c1599b
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2166532X
DOI:10.1063/1.5094787