دورية أكاديمية
The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
| العنوان: | The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method |
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| المؤلفون: | A.I. Ievtushenko, M.G. Dusheyko, V.A. Karpyna, O.I. Bykov, P.M. Lytvyn, O.I. Olifan, V.A. Levchenko, A.A. Korchovyi, S.P. Starik, S.V. Tkach, G.V. Lashkarev |
| المصدر: | Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 3, Pp 314-318 (2017) |
| بيانات النشر: | National Academy of Sciences of Ukraine. Institute of Semi conductor physics., 2017. |
| سنة النشر: | 2017 |
| المجموعة: | LCC:Physics |
| مصطلحات موضوعية: | Cu-Al-O films, XRD, optic properties, FTIR, morphology, Physics, QC1-999 |
| الوصف: | For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fourier transform infrared spectrometry and optical transmission measurements have been discussed. It was shown that the increase of substrate temperature caused formation of the CuAlO2 phase. Additional optimization of technological parameters of growth and post-growth temperature annealing are necessary to obtain single-phase CuAlO2 films. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1560-8034 1605-6582 |
| Relation: | http://journal-spqeo.org.ua/n3_2017/P314-318abstr.html; https://doaj.org/toc/1560-8034; https://doaj.org/toc/1605-6582 |
| DOI: | 10.15407/spqeo20.03.314 |
| URL الوصول: | https://doaj.org/article/7a41484e8ce9439e84cc35b89013e63f |
| رقم الأكسشن: | edsdoj.7a41484e8ce9439e84cc35b89013e63f |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 15608034 16056582 |
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| DOI: | 10.15407/spqeo20.03.314 |