دورية أكاديمية

Advances in Semiconductor Lasers Based on Parity–Time Symmetry

التفاصيل البيبلوغرافية
العنوان: Advances in Semiconductor Lasers Based on Parity–Time Symmetry
المؤلفون: Hongbo Sha, Yue Song, Yongyi Chen, Jishun Liu, Mengjie Shi, Zibo Wu, Hao Zhang, Li Qin, Lei Liang, Peng Jia, Cheng Qiu, Yuxin Lei, Yubing Wang, Yongqiang Ning, Guoqing Miao, Jinlong Zhang, Lijun Wang
المصدر: Nanomaterials, Vol 14, Iss 7, p 571 (2024)
بيانات النشر: MDPI AG, 2024.
سنة النشر: 2024
المجموعة: LCC:Chemistry
مصطلحات موضوعية: semiconductor lasers, parity–time (PT) symmetry, quantum mechanics, longitudinal modulation in PT-symmetric structures, transverse modulation, distributed-feedback laser, Chemistry, QD1-999
الوصف: Semiconductor lasers, characterized by their high efficiency, small size, low weight, rich wavelength options, and direct electrical drive, have found widespread application in many fields, including military defense, medical aesthetics, industrial processing, and aerospace. The mode characteristics of lasers directly affect their output performance, including output power, beam quality, and spectral linewidth. Therefore, semiconductor lasers with high output power and beam quality are at the forefront of international research in semiconductor laser science. The novel parity–time (PT) symmetry mode-control method provides the ability to selectively modulate longitudinal modes to improve the spectral characteristics of lasers. Recently, it has gathered much attention for transverse modulation, enabling the output of fundamental transverse modes and improving the beam quality of lasers. This study begins with the basic principles of PT symmetry and provides a detailed introduction to the technical solutions and recent developments in single-mode semiconductor lasers based on PT symmetry. We categorize the different modulation methods, analyze their structures, and highlight their performance characteristics. Finally, this paper summarizes the research progress in PT-symmetric lasers and provides prospects for future development.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2079-4991
Relation: https://www.mdpi.com/2079-4991/14/7/571; https://doaj.org/toc/2079-4991
DOI: 10.3390/nano14070571
URL الوصول: https://doaj.org/article/bcc868e44efe4fd2b1c5ed1144e07186
رقم الأكسشن: edsdoj.bcc868e44efe4fd2b1c5ed1144e07186
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:20794991
DOI:10.3390/nano14070571