دورية أكاديمية
Sub-100 nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors With Gate Insulator of 4 nm Atomic-Layer-Deposited AlOx
العنوان: | Sub-100 nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors With Gate Insulator of 4 nm Atomic-Layer-Deposited AlOx |
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المؤلفون: | Zhang, Y., Li, J., Huang, T., Guan, Y., Yang, H., Chan, M., Wang, X., Lu, L., Zhang, S. |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(3):444-447 Mar, 2023 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
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DOI: | 10.1109/LED.2023.3237747 |