Double spin-torque magnetic tunnel junction devices for last-level cache applications

التفاصيل البيبلوغرافية
العنوان: Double spin-torque magnetic tunnel junction devices for last-level cache applications
المؤلفون: Hu, G., Safranski, C., Sun, J. Z., Hashemi, P., Brown, S. L., Bruley, J., Buzi, L., D'Emic, C. P., Galligan, E., Gottwald, M. G., Gunawan, O., Lee, J., Karimeddiny, S., Trouilloud, P. L., Worledge, D. C.
المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :10.2.1-10.2.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library