دورية أكاديمية
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors
| العنوان: | Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors |
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| المؤلفون: | Tselios, K., Knobloch, T., Waldhoer, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M. |
| المصدر: | IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 23(3):355-362 Sep, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 15304388 15582574 |
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| DOI: | 10.1109/TDMR.2023.3262141 |