Enhancement-Mode AlN/GaN Fin-type High Electron Mobility Transistor with Low Knee Voltage

التفاصيل البيبلوغرافية
العنوان:	Enhancement-Mode AlN/GaN Fin-type High Electron Mobility Transistor with Low Knee Voltage
المؤلفون:	Gong, Can, Mi, Minhan, Zhou, Yuwei, Wang, Pengfei, Li, Hanzhen, An, Sirui, Zhu, Qing, Zhang, Meng, Ma, Xiaohua
المصدر:	2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2022 IEEE MTT-S International Microwave Workshop Series on. :1-3 Nov, 2022
Relation:	2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
قاعدة البيانات:	IEEE Xplore Digital Library