GaN HEMTs Design and Modeling for 5G

التفاصيل البيبلوغرافية
العنوان: GaN HEMTs Design and Modeling for 5G
المؤلفون: Liu, Yueying, Wood, John, Hu, Zongyang, Ganguly, Satyaki, Fisher, Jeremy, Watts, Mike, Sheppard, Scott, Gajewski, Don, Noori, Basim
المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023
Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665456722
تدمد:19381891
DOI:10.1109/IRPS48203.2023.10117652