مؤتمر
Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND
| العنوان: | Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND |
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| المؤلفون: | Qu, Lina, Yang, Shengwei, He, Ming, Fang, Rui, Zhu, Xiaojuan, Han, Kun, He, Yi |
| المصدر: | 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023 |
| Relation: | 2023 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781665456722 |
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| تدمد: | 19381891 |
| DOI: | 10.1109/IRPS48203.2023.10117688 |