مؤتمر
Selective Dielectric on Dielectric (DOD) achieved on SiO2 in Preference to Wby 300°C Aniline Passivation and Water-free Chemical Vapor Deposition
| العنوان: | Selective Dielectric on Dielectric (DOD) achieved on SiO2 in Preference to Wby 300°C Aniline Passivation and Water-free Chemical Vapor Deposition |
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| المؤلفون: | Kummel, Andrew C. |
| المصدر: | 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023 International VLSI Symposium on. :1-1 Apr, 2023 |
| Relation: | 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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