Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment

التفاصيل البيبلوغرافية
العنوان: Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment
المؤلفون: Paul, N.C., Ohta, Y., Tezuka, D., Nasuno, M., Yamamura, Y., Inokuma, T., Iiyama, K., Takamiya, S.
المصدر: Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :217-220 2002
Relation: Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM)
قاعدة البيانات: IEEE Xplore Digital Library