مؤتمر
Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment
العنوان: | Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment |
---|---|
المؤلفون: | Paul, N.C., Ohta, Y., Tezuka, D., Nasuno, M., Yamamura, Y., Inokuma, T., Iiyama, K., Takamiya, S. |
المصدر: | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :217-220 2002 |
Relation: | Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
كن أول من يترك تعليقا!