مؤتمر
Highly uniform 4-inch diameter InGaAs/InP epitaxial wafer for PIN-PD application
العنوان: | Highly uniform 4-inch diameter InGaAs/InP epitaxial wafer for PIN-PD application |
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المؤلفون: | Doi, H., Iguchi, Y., Kimura, H., Iwasaki, T., Miura, Y., Yokogawa, M. |
المصدر: | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :635-638 2002 |
Relation: | Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780373200 9780780373204 |
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تدمد: | 10928669 |
DOI: | 10.1109/ICIPRM.2002.1014590 |