مؤتمر
Highly uniform 4-inch diameter InGaAs/InP epitaxial wafer for PIN-PD application
| العنوان: | Highly uniform 4-inch diameter InGaAs/InP epitaxial wafer for PIN-PD application |
|---|---|
| المؤلفون: | Doi, H., Iguchi, Y., Kimura, H., Iwasaki, T., Miura, Y., Yokogawa, M. |
| المصدر: | Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :635-638 2002 |
| Relation: | Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder كن أول من يترك تعليقا!