Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $p$-GaN Gate HEMTs

التفاصيل البيبلوغرافية
العنوان:	Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $p$-GaN Gate HEMTs
المؤلفون:	Sun, Jiahui, Zheng, Zheyang, Zhang, Li, Ng, Yat Hon, Shu, Ji, Chen, Tao, Chen, Kevin J.
المصدر:	2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :24-27 May, 2023
Relation:	2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library