Low Leakage and High Speed Sub-threshold 128-bit Fin-FET SRAM for Ultra-Low-Power Applications

التفاصيل البيبلوغرافية
العنوان: Low Leakage and High Speed Sub-threshold 128-bit Fin-FET SRAM for Ultra-Low-Power Applications
المؤلفون: Reddy, T. Vasudeva, Madhava Rao, K., Reddy, R. Anirudh, Kavitha Reddy, P.
المصدر: 2023 3rd International Conference on Intelligent Technologies (CONIT) Intelligent Technologies (CONIT), 2023 3rd International Conference on. :1-4 Jun, 2023
Relation: 2023 3rd International Conference on Intelligent Technologies (CONIT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350338560
9798350338607
DOI:10.1109/CONIT59222.2023.10205883