دورية أكاديمية
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors With Hf1–xLaxOyNz as Gate Dielectric by Optimizing La Content and Anneal Temperature Plus NH3-Plasma Treatment
| العنوان: | Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors With Hf1–xLaxOyNz as Gate Dielectric by Optimizing La Content and Anneal Temperature Plus NH3-Plasma Treatment |
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| المؤلفون: | Tian, Y., Liu, L., Jiang, W., Xu, J. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(10):5408-5414 Oct, 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2023.3299914 |