دورية أكاديمية
2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection
| العنوان: | 2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection |
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| المؤلفون: | Gu, Y., Jiang, X., Lu, N., Guo, J., Liu, Y., Yang, X., Qian, W., Zhang, X., Chen, G., Tao, T., Yang, G. |
| المصدر: | IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 11:518-523 2023 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 21686734 |
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| DOI: | 10.1109/JEDS.2023.3316355 |