دورية أكاديمية
Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling
| العنوان: | Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling |
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| المؤلفون: | Hong, H., Yi, D., Moon, Y., Son, K., Lim, J.H., Jeong, K., Chung, K. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(2):1097-1101 Feb, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2023.3347503 |