التفاصيل البيبلوغرافية
| العنوان: |
Highly Manufacturable, Cost-Effective, and Monolithically Stackable 4F2 Single-Gated IGZO Vertical Channel Transistor (VCT) for sub-10nm DRAM |
| المؤلفون: |
Ha, Daewon, Lee, Wonsok, Cho, M.H., Terai, M., Yoo, S.-W., Kim, H., Lee, Y., Uhm, S., Ryu, M., Sung, C., Song, Y., Lee, K., Park, S.W., Lee, K.-S., Tak, Y.S., Hwang, E., Chae, J., Im, C., Byeon, S., Hong, M., Sim, K., Jung, W.J., Ryu, H., Hong, M.J., Park, S., Park, J., Choi, Y., Lee, S., Woo, G., Lee, J., Kim, D.S., Kuh, B.J., Shin, Yu Gyun, Song, Jaihyuk |
| المصدر: |
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023 |
| Relation: |
2023 International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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