مؤتمر
Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance
| العنوان: | Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance |
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| المؤلفون: | Ahlgren, D.C., Jagannathan, B., Jeng, S.-J., Smith, P., Angell, D., Chen, H., Khater, M., Pagette, F., Rieh, J.-S., Schonenberg, K., Stricker, A., Freeman, G., Joseph, A., Stein, K., Subbanna, S. |
| المصدر: | Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002. :80-83 2002 |
| Relation: | 2002 IEEE Bipolar/BICMOS Circuits and Technology Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780375610 9780780375611 |
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| تدمد: | 10889299 |
| DOI: | 10.1109/BIPOL.2002.1042891 |