Discussion on the Main Mechanisms Contributing to the 1/f Noise in GAA Si VNW pMOSFETs

التفاصيل البيبلوغرافية
العنوان: Discussion on the Main Mechanisms Contributing to the 1/f Noise in GAA Si VNW pMOSFETs
المؤلفون: Tahiat, Abderrahim, Cretu, Bogdan, Veloso, Anabela, Simoen, Eddy
المصدر: 2023 International Conference on Noise and Fluctuations (ICNF) Noise and Fluctuations (ICNF), 2023 International Conference on. :1-4 Oct, 2023
Relation: 2023 International Conference on Noise and Fluctuations (ICNF)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350330113
تدمد:25755595
DOI:10.1109/ICNF57520.2023.10472753