التفاصيل البيبلوغرافية
| العنوان: |
Gate Leakage Current Analysis using Bayesian Deconvolution for Accurate Electron/Hole Trapping Characterizations in 4H-SiC MOSFETs |
| المؤلفون: |
Singh, Shivendra Kumar, Wu, Tian-Li, Chauhan, Yogesh Singh |
| المصدر: |
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024 |
| Relation: |
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
