دورية أكاديمية
Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process
| العنوان: | Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process |
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| المؤلفون: | Yang, T., Onaya, T., Kita, K. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(7):1145-1148 Jul, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2024.3400954 |