Contact Material and Interface State Effects on AlGaN/GaN HEMT Characteristic and Performance

التفاصيل البيبلوغرافية
العنوان: Contact Material and Interface State Effects on AlGaN/GaN HEMT Characteristic and Performance
المؤلفون: Alam, Md Jawaid, Sidhwa, Haroonhaider, Giriprasad, S
المصدر: 2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI) Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI), 2024 International Conference on. :1-6 Apr, 2024
Relation: 2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350354539
DOI:10.1109/RAEEUCCI61380.2024.10547848