SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS

التفاصيل البيبلوغرافية
العنوان: SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS
المؤلفون: Su, Zexin, Li, Bo, Liu, Chang, Su, Xiaohui, Luo, Qian, Ren, Hongyu, Han, Zhengsheng
المصدر: 2024 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2024 IEEE International Symposium on. :1-5 May, 2024
Relation: 2024 IEEE International Symposium on Circuits and Systems (ISCAS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350330991
تدمد:21581525
DOI:10.1109/ISCAS58744.2024.10558439