A 170GHz 5.5dB NF Low-Noise Amplifier in 55nm SiGe BiCMOS

التفاصيل البيبلوغرافية
العنوان: A 170GHz 5.5dB NF Low-Noise Amplifier in 55nm SiGe BiCMOS
المؤلفون: De Filippi, Guglielmo, Piotto, Lorenzo, Bruccoleri, Melchiorre, Mazzanti, Andrea
المصدر: 2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Ph.D Research in Microelectronics and Electronics (PRIME), 2024 19th Conference on. :1-4 Jun, 2024
Relation: 2024 19th Conference on PhD Research in Microelectronics and Electronics (PRIME)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350386301
DOI:10.1109/PRIME61930.2024.10559706