Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch

التفاصيل البيبلوغرافية
العنوان:	Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch
المؤلفون:	Zhang, Boyao, Chew, Soon-Aik, Stucchi, Michele, Dewilde, Sven, Iacovo, Serena, Witters, Liesbeth, Webers, Tomas, Van Sever, Koen, De Vos, Joeri, Miller, Andy, Beyer, Gerald, Beyne, Eric
المصدر:	2024 IEEE 74th Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2024 IEEE 74th. :312-318 May, 2024
Relation:	2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
قاعدة البيانات:	IEEE Xplore Digital Library