Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap

التفاصيل البيبلوغرافية
العنوان: Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap
المؤلفون: Ye, Jun, Mo, Weiye, Xiao, Xuan, Liu, Haonan, Song, Yang, Huang, Wei, Zhang, Debin, Zhang, David. Wei
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :402-405 Jun, 2024
Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350394825
تدمد:19460201
DOI:10.1109/ISPSD59661.2024.10579571