التفاصيل البيبلوغرافية
| العنوان: |
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness |
| المؤلفون: |
Zhou, Tianyang, Zhou, Feng, Chen, Quanyou, Lyu, Xiaofeng, Xu, Weizong, Zhou, Dong, Ren, Fangfang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Wang, Ke, Li, Yiheng, Zhu, Tinggang, Zhang, Rong, Zheng, Youdou, Lu, Hai |
| المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :526-529 Jun, 2024 |
| Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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