Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices

التفاصيل البيبلوغرافية
العنوان:	Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices
المؤلفون:	Liu, Yong, Feng, Hao, Peng, Xin, Huang, Linhua, Sin, Johnny K.O.
المصدر:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :17-20 Jun, 2024
Relation:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library