التفاصيل البيبلوغرافية
العنوان: |
Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices |
المؤلفون: |
Liu, Yong, Feng, Hao, Peng, Xin, Huang, Linhua, Sin, Johnny K.O. |
المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :17-20 Jun, 2024 |
Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
قاعدة البيانات: |
IEEE Xplore Digital Library |