1-kV β-Ga2O3UMOSFET with Quasi-Inversion Nitrogen-Ion-Implanted Channel

التفاصيل البيبلوغرافية
العنوان:	1-kV β-Ga2O3UMOSFET with Quasi-Inversion Nitrogen-Ion-Implanted Channel
المؤلفون:	Liu, Qi, Zhou, Xuanze, Wong, Man Hoi, Yao, Huidong, Zhou, Jingbo, Zhang, Xiaodong, Xu, Guangwei, Long, Shibing
المصدر:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :236-239 Jun, 2024
Relation:	2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library