التفاصيل البيبلوغرافية
| العنوان: |
Gate Damage Mechanism of Schottky-Type p-GaN Gate HEMTs in Reverse Conduction Mode Under Surge Current Stress |
| المؤلفون: |
Wang, Xiaoming, Sun, Ruize, Xia, Yun, Liu, Chao, Chen, Xinghuan, Chen, Wanjun, Zhang, Bo |
| المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :323-326 Jun, 2024 |
| Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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