التفاصيل البيبلوغرافية
| العنوان: |
Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons |
| المؤلفون: |
Spejo, Lucas B., Rehm, Silvan, Novak, Vladimir, Ammann, Benedict, Wursch, Philippe, Stark, Roger, Knoll, Lars, Schulz, Nicola, Minamisawa, Renato A. |
| المصدر: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :60-63 Jun, 2024 |
| Relation: |
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
Full Text Finder