مؤتمر
Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons
العنوان: | Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons |
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المؤلفون: | Spejo, Lucas B., Rehm, Silvan, Novak, Vladimir, Ammann, Benedict, Wursch, Philippe, Stark, Roger, Knoll, Lars, Schulz, Nicola, Minamisawa, Renato A. |
المصدر: | 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :60-63 Jun, 2024 |
Relation: | 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
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