A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout

التفاصيل البيبلوغرافية
العنوان: A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout
المؤلفون: Lynch, Justin, Mancini, Steve, deBoer, Skylar, Jang, Seung-Yup, Morgan, Adam J., Lee, Bongmook, Sung, Woongje
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :124-127 Jun, 2024
Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350394825
تدمد:19460201
DOI:10.1109/ISPSD59661.2024.10579673