Bi-Directional Operation and Active Err Reduction of 2nd Generation Back-Gate-Controlled IGBTs (BC-IGBTs)

التفاصيل البيبلوغرافية
العنوان: Bi-Directional Operation and Active Err Reduction of 2nd Generation Back-Gate-Controlled IGBTs (BC-IGBTs)
المؤلفون: Saraya, T., Fukui, M., Kobayashi, Y., Itou, K., Takakura, T., Suzuki, S., Gejo, R., Sakano, T., Inokuchi, T., Matsudai, T., Takao, K., Hiramoto, T.
المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :546-549 Jun, 2024
Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9798350394825
تدمد:19460201
DOI:10.1109/ISPSD59661.2024.10579686