دورية أكاديمية
Degradation Mechanism of Normally-On AlGaN/GaN HEMTs Under Short- and Long-Term HTRB Stress
| العنوان: | Degradation Mechanism of Normally-On AlGaN/GaN HEMTs Under Short- and Long-Term HTRB Stress |
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| المؤلفون: | Chen, Y., Lu, M., Liu, C., Liao, M. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(9):5258-5263 Sep, 2024 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2024.3427613 |