مؤتمر
Physical compact model for threshold voltage in short-channel double-gate devices
العنوان: | Physical compact model for threshold voltage in short-channel double-gate devices |
---|---|
المؤلفون: | Keunwoo Kim, Fossum, J.G., Ching-Te Chuang |
المصدر: | International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on. :223-226 2003 |
Relation: | IEEE International Conference on Simulation of Semiconductor Processes and Devices |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780378261 9780780378261 |
---|---|
DOI: | 10.1109/SISPAD.2003.1233677 |