مؤتمر
Physical compact model for threshold voltage in short-channel double-gate devices
| العنوان: | Physical compact model for threshold voltage in short-channel double-gate devices |
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| المؤلفون: | Keunwoo Kim, Fossum, J.G., Ching-Te Chuang |
| المصدر: | International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on. :223-226 2003 |
| Relation: | IEEE International Conference on Simulation of Semiconductor Processes and Devices |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780378261 9780780378261 |
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| DOI: | 10.1109/SISPAD.2003.1233677 |